Semiconductor device having first and second insulating layers

Details Semiconductor device having first and second insulating layers Semiconductor device having first and second insulating layers

1997-05-12

1999-04-13

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257411, 257635, 438787, 438788, H01L 2976, H01L 2994

Patent

active

058941592

ABSTRACT:
A semiconductor device advantageously has first and second oxidized silicon insulating layers formed on the surface of a substrate. A first oxidized silicon insulating layer is formed through a low temperature process and a second oxidized silicon insulating layer may be formed at a higher manufacturing process temperature. Advantageously, the first oxidized silicon insulating layer has a lower voltage resistance than the second oxidized silicon insulating layer.

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