Method for simultaneously forming silicide and effecting dopant

Details Method for simultaneously forming silicide and effecting dopant Method for simultaneously forming silicide and effecting dopant

1992-06-18

1993-08-17

Maples, John S.

Fishing, trapping, and vermin destroying

437195, 437200, H01L 21268, H01L 21441

Patent

active

052368653

ABSTRACT:
A method for forming silicides while simultaneously activating underlying silicon substrate active regions eliminates the need for separate annealing of the active region following ion-implantation procedures. The required energy for such simultaneous processing is provided by laser irradiation directed to the surface of a wafer after blanketing it with a layer of the metal desired in the silicide.

REFERENCES:
patent: 4617723 (1986-10-01), Mukai
patent: 4830971 (1989-05-01), Shibata
patent: 4924294 (1990-05-01), Tanielian
"Shallow Junction Diode Formation by Implantation of Arsenic and Boron Through Titanium-Silicide Films and Rapid Thermal Annealing" by Rubin, et al., IEEE Transactions on Electronic Devices, vol. 37, No. 1, Jan. 1990, pp. 183-190.
"The Application of Ion Beam Mixing, Doped Silicide, and Rapid Thermal Processing to Self-Aligned Silicide Technology" by Ku, et al., Journal of the Electrochemical Society, vol. 137, No. 2, Feb. 1990, pp. 728-740.
"Silicon Processing for the VLSI Era" by Wolf, Published by Lattice Press (Dec. 1990), vol. 2, pp. 143-152.
"Silicon Processing for the VLSI Era, vol. 2 Process Integration" by Wolf, Published by Lattice Press (Dec. 1990) pp. 255-256.
"Microchip Fabrication" by Van Zant, Published by Semiconductor Services, San Jose, CA (Dec. 1986), p. 173.

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