Semiconductor device having high breakdown voltage and method of

Details Semiconductor device having high breakdown voltage and method of Semiconductor device having high breakdown voltage and method of

1996-12-09

1999-04-13

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257129, 257139, 257341, 257409, 257144, 257152, 257333, H01L 2978, H01L 29745

Patent

active

058941495

ABSTRACT:
In a semiconductor device with a high breakdown voltage, insulating layers are buried at regions in n.sup.31 silicon substrate located between gate trenches which are arranged with a predetermined pitch. This structure increases a carrier density at a portion near an emitter, and improves characteristic of an IGBT of a gate trench type having a high breakdown voltage.

REFERENCES:
patent: 4571512 (1986-02-01), Schutten
patent: 5241194 (1993-08-01), Baliga
patent: 5703384 (1997-12-01), Brunner
Ken'ichi Matsushita, et al: "Blocking Voltage Design Consideration for Deep Trench MOS Gate High Power Devices", Proceeding of 1995 International Symposium on Power Semiconductor Devices & ICs, Yokohama, pp.256-206.
Mitsuhiko Kitagawa, et al: "4500 V IEGTs having Switching Characteristics Superior to GTO", Proceeding of l995 International Symposium on Power Semiconductor Devices & ICs, Yokohama, pp.486-491.

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