MOS semiconductor device having LDD structure

Details MOS semiconductor device having LDD structure MOS semiconductor device having LDD structure

1991-03-19

1992-06-02

James, Andrew J.

357 234, 357 54, H01L 2910, H01L 2978

Patent

active

051191520

ABSTRACT:
Disclosed is a MOS type semiconductor device, particularly, a MOS type transistor of an LDD structure, which is featured in the side wall structure which covers the side surface of a gate electrode formed on the surface of a semiconductor substrate with a first insulating film interposed therebetween. The semiconductor device comprises source and drain regions of a double diffusion structure consisting of an impurity diffusion region of a relatively low impurity concentration formed apart from the gate electrode in the surface region of the semiconductor substrate and positioned below the side wall region of the gate electrode, and an impurity diffusion region of a relatively high impurity concentration formed in the surface region of the semiconductor substrate and positioned outside the gate electrode. The side wall structure of the gate electrode comprises a first material layer having a first dielectric constant and formed as a side wall of the gate electrode on the impurity diffusion region of the relatively low impurity concentration, and a second material layer having a second dielectric constant small than the first dielectric constant and formed as a side wall of the gate electrode to cover the first material layer, said second material layer being positioned to cover the boundary region between the impurity diffusion regions of the low and high impurity concentrations.

REFERENCES:
patent: 4908326 (1990-03-01), Ma et al.
patent: 4949136 (1990-08-01), Jain
patent: 4951100 (1990-08-01), Parrillo
patent: 4994404 (1991-02-01), Sheng et al.
patent: 5023190 (1991-06-01), Lee et al.
"High Dielectric LDD Spacer Technology For High Performance MOSFET Using Gate-Fringing Field Effects", IEDM Technical Digest, pp. 613-616 (1989), T. Mizuno et al.

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