Process for dislocation-free slot isolations in device fabricati

Details Process for dislocation-free slot isolations in device fabricati Process for dislocation-free slot isolations in device fabricati

1983-12-22

1984-06-26

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156648, 156651, 156657, 1566591, 156662, 204192E, 252 791, 252 793, 252 794, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

044565011

ABSTRACT:
A semiconductor wafer masked with a masking layer having an opening therethrough exposing a portion of the wafer which is to be etched to form a depression of a desired depth is etched via a first plasma etching step under high bias voltage-high energy conditions with a plasma which includes chlorine and a shape modifier species, e.g., argon, to a first depth which is less than the desired depth. Thereafter, the depression is treated by a second plasma etching step under low bias voltage-low energy plasma etching conditions with a plasma which includes chlorine and is substantially free of the shape modifier species. A wet chemical etch follows to remove damaged silicon and impurities. The resulting depression has relatively straight walls and is relatively free of cusps and apexes. The depression is formed quickly and has a desired shape while only a minimal amount of damage and impurities are introduced into the wafer.

REFERENCES:
patent: 4222792 (1980-09-01), Lever et al.
patent: 4325182 (1982-04-01), Tefft et al.
patent: 4352724 (1982-10-01), Sugishima et al.
patent: 4394196 (1983-07-01), Iwai

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