Ferroelectric memory and method for controlling operation of the

Details Ferroelectric memory and method for controlling operation of the Ferroelectric memory and method for controlling operation of the

1996-01-04

1997-09-16

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, G11C 1122

Patent

active

056687532

ABSTRACT:
In a ferroelectric memory, when data is read out from a memory cell, for the purpose of minimizing a variation of the voltage on the pair of data signal lines caused by factor other than the current caused due to the polarization of the ferroelectric capacitor, the number of memory cells connected to each one data signal line is limited. Thus, a voltage not smaller than the coercive voltage can be applied between the opposing electrodes of the ferroelectric capacitor, with the result that a sufficient read-out signal voltage can be obtained.

REFERENCES:
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 5029128 (1991-07-01), Toda
patent: 5270967 (1993-12-01), Moazzami et al.
1988 IEEE International Solid-State Circuits Conference (ISSCC), Feb. 18, 1988, Digest of Technical Papers, pp. 130-131, "A Ferroelectric Nonvolatile Memory", by S.S. Eaton et al.
1994 IEEE International Solid-State Circuits Conference (ISSCC), Feb. 18, 1994, Digest of Technical Papers, pp. 268-269, "A 256kb Nonvolatile Ferroelectric Memory at 3V and 100 ns," by T. Sumi et al.

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