Semiconductor device with an interconnection layer on surface ha

Details Semiconductor device with an interconnection layer on surface ha Semiconductor device with an interconnection layer on surface ha

1992-04-28

1994-06-21

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257770, 257755, H01L 2348, H01L 2944, H01L 2952, H01L 2946

Patent

active

053230493

ABSTRACT:
In a semiconductor apparatus, a first conductive interconnection layer and a second conductive interconnection layer are formed respectively on a lower surface and a higher surface of an interlayer insulation film interposing a step-like portion therebetween by employing different photolithography and etching. A dummy interconnection is provided directly beneath the second conductive interconnection layer in the vicinity of the step-like portion. The first and second conductive interconnection layers and are electrically connected to each other by a conductive layer formed directly on the dummy interconnection in a region including the step-like portion to extend over the surface of a silicon substrate. Consequently, even if the step-like portion is larger than depth of focus, the first and second conductive interconnection layers are precisely patterned within depth of focus.

REFERENCES:
patent: 5177575 (1993-01-01), Ikeda
patent: 5196910 (1993-03-01), Moriuchi et al.

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