Method for forming a bipolar emitter using doped SOG

Details Method for forming a bipolar emitter using doped SOG Method for forming a bipolar emitter using doped SOG

1992-10-16

1994-06-21

Kunemund, Robert

Fishing, trapping, and vermin destroying

437164, 437231, H01L 21225

Patent

active

053228057

ABSTRACT:
A method for forming a bipolar emitter using doped SOG which employs diffusion instead of implanting, and which produces a shallow, low-resistance emitter using a variety of dopants besides boron and phosphorus. A layer of doped SOG is spun over a predefined base region. Portions of the SOG layer are defined for removal and removed, leaving the collector and emitter contact areas exposed. The SOG layer is densified and the dopants are driven into the base to form the emitter.

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