Device and method for repairing a memory array by storing each b

Details Device and method for repairing a memory array by storing each b Device and method for repairing a memory array by storing each b

1998-01-29

2000-09-05

Mai, Son

Static information storage and retrieval

Read/write circuit

Bad bit

365149, 36523004, G11C 700

Patent

active

061152994

ABSTRACT:
A DRAM array is repairable when the array includes memory cells that are defective because their storage capacitors are unable to retain a sufficient electric charge to properly store "1" and "0" bits. To repair the array, both even and odd row decoders in the array are permanently enabled so that each row address the array receives causes the even row decoder to energize at least one even word line and the odd row decoder to energize at least one odd word line. As a result, at least two memory cells are accessed for each row address so that each "1" or "0" bit is stored as an electric charge in at least two memory cells. By grouping enough memory cells together in this manner to store each "1" and "0" bit, the grouped memory cells are able to retain a sufficient total electric charge as a group to properly store each bit even when individual memory cells in the group are unable to do so.

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