Etching method for semiconductor devices

Details Etching method for semiconductor devices Etching method for semiconductor devices

1984-05-01

1985-10-08

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156646, 156653, 156656, 156657, 1566591, 156662, 156345, 204192E, 427 38, 427 90, 430314, H01L 21306, B44C 122, C03C 1500, C23F 102

Patent

active

045458510

ABSTRACT:
An etching method for fabricating a contact hole in an insulating layer between multi-layered wiring layers of a semiconductor device. Etching is performed by chemical dry etching, in which the plasma of the etchant gas is formed in a separate chamber and fed to the etching chamber. The substrate is covered with a photo resist mask which includes a pattern hole and is heated, from the side opposite the mask, up to a softening temperature of the photo resist. The edge of the photo resist mask surrounding the pattern hole gradually rolls up as side etching proceeds under the edge of the photo resist mask with the result that the side walls of the contact hole are tapered. Consequently, the subsequently formed wiring layer formed thereon has good step coverage over the side walls of the contact hole, so that discontinuities and breakage of the wiring layer is prevented and the reliability and yield of the manufacturing process are improved.

REFERENCES:
patent: 3986912 (1976-10-01), Alcorn et al.
patent: 4354897 (1982-10-01), Nakajima
"Glow Discharge Processes", Brian Chapman, John Wiley & Sons, 1980, pp. v-vii, ix-xv and 326-327.

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