Emitter coupled logic bipolar memory cell

Details Emitter coupled logic bipolar memory cell Emitter coupled logic bipolar memory cell

1984-12-18

1987-03-31

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

357 92, 365154, 365190, 307317A, G11C 1140, G11C 1136

Patent

active

046548246

ABSTRACT:
An improved ECL bipolar memory cell is disclosed which comprises connecting the respective collectors of the memory transistors in the flip-flop circuit to bit lines using Schottky diodes to protect against latch-up of the ECL cell; and the inversion of the transistors in the circuits to provide a buried emitter construction for alpha strike protection. In a preferred embodiment, the Schottky diode and the load devices, such as resistors or load transistors used to couple the cell to one of the word lines are made using polysilicon to facilitate construction of the cell, reduce the total number of contacts needed, and enhance the speed of the cell.

REFERENCES:
patent: 3909807 (1975-09-01), Fulton
patent: 4460984 (1984-07-01), Knepper
patent: 4480319 (1984-10-01), Hotta et al.
patent: 4513309 (1985-04-01), Cricchi
patent: 4543595 (1985-09-01), Vora
J. A. Dorler et al. "A 1024-Byte ECC Random Access Memory Using a Complementary Transistor Switch (CTS) Cell", IBM J. Res. Develop., vol. 25, No. 3, May 1981, pp. 126-134.
J. Agraz-Guerena et al. "OXIL, A Versatal Bipolar VLSI Technology", IEEE J. Solid-State Circuits, vol. SC-15, No. 4, Aug. 1980, pp. 462-466.

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