Integrate DRAM cell having a DRAM capacitor and a transistor

Details Integrate DRAM cell having a DRAM capacitor and a transistor Integrate DRAM cell having a DRAM capacitor and a transistor

1998-12-24

2000-06-06

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257304, 257306, 257311, 438253, 438396, H01L 27108, H01L 2120

Patent

active

06072210&

ABSTRACT:
An integrated DRAM cell comprises a DRAM capacitor and a transistor. The capacitor of the cell is formed in a first well in a dielectric layer overlying the cell transistor. The top electrode of the capacitor also serves as a barrier layer between an underlying plug in a second well in the dielectric layer. A method of forming the cell comprises the step of using a single mask for formation of the layer which acts as both the top electrode of the capacitor and the barrier layer of the second well.

REFERENCES:
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patent: 5604696 (1997-02-01), Takaishi
patent: 5648290 (1997-07-01), Yee
patent: 5677222 (1997-10-01), Tseng
patent: 5792690 (1998-08-01), Sung
patent: 5801079 (1998-09-01), Takaishi
patent: 5858831 (1999-01-01), Sung
patent: 6001685 (1999-12-01), Kim

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