Method for making submicron mask openings using sidewall and lif

Details Method for making submicron mask openings using sidewall and lif Method for making submicron mask openings using sidewall and lif

1985-11-18

1987-03-31

Lindsay, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29576R, 29576J, 156632, 156638, 156643, 156653, 156657, H01L 21306

Patent

active

046541195

ABSTRACT:
A method is disclosed for making submicron openings in a substrate. A mesa is formed on the substrate by reactive ion etching techniques. A film is deposited over the entire structure and the mesa is selectively etched away to yield a submicron-sized opening in the film. Using the film as a mask, the substrate exposed thereby is reactively ion etched. An example is given for producing an emitter mask for a polycrystalline silicon base bipolar transistor.

REFERENCES:
patent: 3982943 (1976-09-01), Feng et al.
patent: 4209349 (1980-06-01), Ho et al.
patent: 4274909 (1981-06-01), Venkataraman et al.
patent: 4387145 (1983-06-01), Lehrer et al.
patent: 4430791 (1984-02-01), Dockerty
patent: 4563241 (1986-01-01), Tanaka et al.
patent: 4572765 (1986-02-01), Berry
patent: 4575924 (1986-03-01), Reed et al.
IBM Technical Disclosure Bulletin, by R. P. Each et al, "Obtaining Evaporated Metal Patterns on Substrates," vol. 9, No. 4, Sep. 1966, pp. 348-349.

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