SOI-MOS field effect transistor with improved source/drain struc

Details SOI-MOS field effect transistor with improved source/drain struc SOI-MOS field effect transistor with improved source/drain struc

1998-03-25

2000-12-12

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257348, 257349, 257350, 257351, 257352, 257353, 257354, 257355, H01L 2701

Patent

active

061602914

ABSTRACT:
The present invention provides a source/drain structure formed in a semiconductor layer which has source and drain regions of a first conductivity type and a body portion of a second conductivity type disposed between said source and drain regions. The body portion is positioned under a gate insulation film over which a gate electrode is provided. The source region has a first low resistive region which is lower in electrical resistivity than said source region and said drain region having a second low resistive region which is lower in electrical resistively than said source region. For the first present invention, it is important that a distance of an inside edge portion of the first low resistive region from a first interface between the source region and the body portion is shorter than a distance of an inside portion of the second low resistive region from a second interface between the drain region and the body portion.

REFERENCES:
Yasuhiro Sato et al., "Characteristics of 1/4-.mu.m Gate Ultrathin-Film MOSFETS/SIMOX with Tungsten-Deposited Low-Resistance Source/Drain", Proceedings 1995 IEEE International SOI Conference, Oct. 1995, pp. 28-29.
F. Deng et al.., "Deep Salicidation Using Nickel For Suppressing the Floating Body Effect in Partially Depleted SOI-MOSFET", Proceedings 1996 IEEE International SOI Conference, Oct. 1996, pp. 78-79.

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