Flash memory

Details Flash memory Flash memory

1998-12-08

2000-12-12

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257319, 257324, 257331, H01L 2972

Patent

active

061602876

ABSTRACT:
A flash memory. A tunnel oxide layer covers a part of a substrate. The tunnel oxide layer is covered by a floating gate. A first inter-poly dielectric layer is on the floating gate. A controlling gate is on the first inter-poly dielectric layer and extending in a strip shape along a first direction. A second inter-poly dielectric layer covers a first side wall of the floating gate, the first inter-poly dielectric layer, and the controlling gate. A polysilicon spacer is formed covering the second inter-dielectric layer. A drain region is next to a second side wall of the floating gate the first interpoly dielectric layer. and the controlling gate in the substrate. A source region is next to the spacer in the substrate. A select gate covering the controlling gate, the tunnel oxide layer. and the spacer extends along a second direction perpendicular to the first direction.

REFERENCES:
patent: 6043530 (2000-06-01), Chang
patent: 6075267 (2000-06-01), Taji et al.

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