Silicon carbide trench MOSFET

Details Silicon carbide trench MOSFET Silicon carbide trench MOSFET

1996-01-25

1997-03-25

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 77, 257289, 257356, 257473, H01L 2978, H01L 2947, H01L 2912, H01L 2906

Patent

active

056147490

ABSTRACT:
A silicon carbide trench MOSFET is provided that includes a first conductivity type semiconductor substrate made of silicon carbide. A first conductivity type drift layer and a second conductivity type base layer, both made of silicon carbide, are sequentially formed by epitaxial growth on the semiconductor substrate. The first conductivity type drift layer has a lower impurity concentration than the semiconductor substrate. A first conductivity type source region is formed in a part of a surface layer of the second conductivity type base layer. A gate electrode is received through an insulating film, in a first trench extending from a surface of the first conductivity type source region to reach the first conductivity type drift layer. A Shottky electrode disposed on an inner surface of a second trench having a greater depth than the first trench.

REFERENCES:
patent: 5216264 (1993-06-01), Fujii et al.
patent: 5323040 (1994-06-01), Baliga
patent: 5396085 (1995-03-01), Baliga
patent: 5506421 (1996-04-01), Palmour
"Trench DMOS Transistor Technology For High-Current (100 A Range) Switching" by Constantin Bulucea and Rebecca Rossen, Solid State Electronics, vol. 34, No. 5 pp. 493-507, 1991.
"High Power and High Frequency Silicon Carbide Devices" by Palmour et al., as published in Diamond SiC, and Nitride Wide-Bandgap Semiconductors Materials Research Society Proceedings, 1994, Presented at the 1994 MRS Spring Meeting, Apr. 5, 1994.

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