CMOS integrated circuit having PMOS and NMOS devices with differ

Details CMOS integrated circuit having PMOS and NMOS devices with differ CMOS integrated circuit having PMOS and NMOS devices with differ

1997-02-28

1998-06-09

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257411, H01L 2976, H01L 2994

Patent

active

057639221

ABSTRACT:
A CMOS integrated circuit having a PMOS and NMOS device with different gate dielectric layers. According to the present invention, an NMOS transistor is formed on a p-type conductivity region of a semiconductor substrate. The NMOS transistor has first gate dielectric layer formed on the p-type conductivity region. A PMOS transistor is formed on a n-type conductivity region of the semiconductor substrate. The PMOS transistor has a second gate dielectric layer wherein the second gate dielectric layer has a different composition than the first gate dielectric layer.

REFERENCES:
patent: 5241208 (1993-08-01), Taguchi

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