Method of manufacturing semiconductor device having different or

Details Method of manufacturing semiconductor device having different or Method of manufacturing semiconductor device having different or

1995-08-23

1997-03-25

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437 88, 437233, 437973, 148DIG16, H01L 2184

Patent

active

056144261

ABSTRACT:
In an active matrix type liquid-crystal display device, in a peripheral circuit portion, there is arranged a TFT having a high mobility and capable of allowing a large amount of on-state current to flow. In a pixel portion, there is arranged a TFT having a small off-state current. These TFTs having different characteristics are constituted by using crystalline silicon film whose crystal has grown in a direction parallel with a substrate. That is, an angle formed between a crystal growing direction and a carrier moving direction are made different from each other, thereby to control a resistance imposed on the carriers when moving to determine the characteristics of the TFT. For example, when the crystal growing direction coincides with the carrier moving direction, high mobility can be given to the carriers. Further, when the crystal growing direction is arranged perpendicular to the carrier moving direction, the off-state current can be lowered.

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