Ferroelectric memory sensing scheme using bit lines precharged t

Details Ferroelectric memory sensing scheme using bit lines precharged t Ferroelectric memory sensing scheme using bit lines precharged t

1995-04-12

1996-06-25

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 365203, G11C 1122, G11C 700

Patent

active

055306683

ABSTRACT:
In a ferroelectric memory cell having a plate line, a word line and a bit line coupled to a sense amplifier, a sensing method includes the steps of precharging the bit line to a logic one voltage, setting the word and plate lines to an initial logic zero voltage, stepping the word line from the initial logic zero voltage to the logic one voltage, stepping the plate line from the initial logic zero voltage to the logic one voltage, activating the sense amplifier to resolve voltage developed on the bit line to a full logic voltage while the word and plate lines are at the logic one voltage, and returning the word and plate lines to the initial logic zero voltage.

REFERENCES:
patent: 4918654 (1990-04-01), Eaton, Jr. et al.
patent: 5029128 (1991-07-01), Toda
patent: 5121353 (1992-06-01), Notori

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