Semiconductor device having a plurality of impurity layers

Details Semiconductor device having a plurality of impurity layers Semiconductor device having a plurality of impurity layers

1994-11-10

1996-08-06

Tran, Minhloan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257376, 257399, 257400, 257519, H01L 2976

Patent

active

055436471

ABSTRACT:
A semiconductor device in which ability for isolating elements from each other can be improved and increase in substrate constant and junction capacitance can be suppressed, is disclosed. An impurity layer for improving the ability for isolating elements is positioned only immediately below an isolating insulating film. An impurity layer for adjusting substrate constant and junction capacitance is formed through independent steps from the impurity layer for improving the isolating ability.

REFERENCES:
patent: 5141882 (1992-08-01), Komori et al.
"A 0.5 um Isolation Technology Using Advanced Poly Silicon Pad LOCOS (Appl)", Toshiyuki Nishihara et al., IEDM, 1988, pp. 100-103.

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