Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-05-04
1996-06-25
Ngo, Ngan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257236, 257238, 257300, 257315, 257316, H01L 29788, H01L 2976
Patent
active
055302750
ABSTRACT:
The invention relates to a semiconductor device with which input signals can be weighted and the weighted input signals can be summed, and which in conjunction with a neuron can be used, for example, as a synapse in a neural network. The device comprises a number of switched capacitances with a common capacitor plate formed by a surface region 3 in a p-type substrate 1. The region 3 is connected to the inverting input of an amplifier 11 whose +input is connected to a reference voltage and whose output 12 supplies the summed output signal. The output 12 can be fed back to the input 3 via switch S. The other plate of the capacitances is formed by an electrode 6a, 6b, 6c, which can be switched between a reference voltage and an input source. The weight factors are stored in the form of electric charges on a floating gate 5a, 5b, 5c, which is provided between each input electrode 6 and the surface region 3. During operation, the input signals are each converted into a depletion charge in the surface region 3 whose value is dependent not only on the input signal but also on the charge on the associated floating gate. The sum of the depletion charges is subsequently stored in an output capacitance 13,3 and read out by means of the amplifier 11.
REFERENCES:
patent: 5266820 (1993-11-01), Van Berkel
"A Functional MOS Transistor Featuring Gate-Level Weighted Sum and Threshold Operations" by T. Shibata and T. Ohmi, published in IEEE Transactions on Electron Devices, vol. 39, No. 6, Jun. 1992, pp. 1444-1455.
Biren Steven R.
Ngo Ngan
U.S. Philips Corporation
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