Fishing – trapping – and vermin destroying
Patent
1992-06-02
1993-09-28
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437228, 156643, 427569, 427573, 427595, 427596, H01L 2100, H01L 2102, H01L 21302, H01L 21463
Patent
active
052486362
ABSTRACT:
A processing apparatus and method wherein a wafer is exposed to activated species generated by a first plasma which is separate from the wafer, but is in the process gas flow stream upstream of the wafer, and is also exposed to plasma bombardment generated by a second plasma which has a dark space which substantially adjoins the surface of the wafer. The in situ plasma is relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the plasma bombardment. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum chamber but is remote from the face of the wafer. It is useful to design the gas flow system such that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator is usefully included between the ultraviolet plasma space and the processing space near the wafer face, so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face, delete but this transparent window is not made thick enough to act as a full vacuum seal.
REFERENCES:
patent: 4525381 (1985-06-01), Tanaka
patent: 4689112 (1987-08-01), Bersin
patent: 4818326 (1989-04-01), Lui et al.
patent: 4874723 (1989-10-01), Jucha et al.
patent: 4877757 (1989-10-01), York et al.
patent: 4904621 (1990-02-01), Loewenstein et al.
Davis Cecil J.
Hildenbrand Randall C.
Jucha Rhett B.
Loewenstein Lee M.
Luttmer Joseph D.
Braden Stanton C.
Donaldson Richard L.
Everhart B.
Hearn Brian E.
Texas Instruments Incorporated
LandOfFree
Processing method using both a remotely generated plasma and an does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Processing method using both a remotely generated plasma and an , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Processing method using both a remotely generated plasma and an will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2190706