Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1994-10-04

1996-06-25

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723I, 118723E, 216 68, H05H 100

Patent

active

055296572

ABSTRACT:
A plasma processing apparatus includes a chamber provided with a susceptor therein for supporting a wafer. A flat coil antenna is mounted on an outer surface of an insulating wall of the chamber to face the wafer. An RF current is supplied to the coil, thereby generating a plasma in the chamber between the coil and the wafer. A focus ring is provided on the susceptor to surround the wafer, which has a projecting portion projecting toward the coil past the surface of the wafer, and consists of an electrical insulator or a high resistor, for directing the plasma generated between the projecting portion and the coil in a direction substantially parallel to the surface of the wafer.

REFERENCES:
patent: 4771730 (1988-09-01), Tezuka
patent: 4948458 (1990-08-01), Ogle
patent: 5246532 (1993-09-01), Ishida
patent: 5261962 (1993-11-01), Hamamoto et al.
patent: 5275683 (1994-01-01), Arami et al.
patent: 5298465 (1994-03-01), Levy
patent: 5304279 (1994-04-01), Coultas et al.
patent: 5320982 (1994-06-01), Tsubone et al.
patent: 5354417 (1994-10-01), Cheung et al.
patent: 5376213 (1994-12-01), Ueda et al.

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