Optical apparatus components having spectrally overlapping chara

Details Optical apparatus components having spectrally overlapping chara Optical apparatus components having spectrally overlapping chara

1993-03-08

1994-12-06

Turner, Samuel A.

Optics: measuring and testing

By dispersed light spectroscopy

Utilizing a spectrometer

356359, G01B 902

Patent

active

053715969

ABSTRACT:
An apparatus for measuring the thickness of a semiconductor layer includes a light source emitting light; an interferometer producing modulated interference light by modulating the light from the light source; an optical system including a light transmission member for introducing the modulated interference light into a measurement sample including at least one film on a substrate; a light detecting element for detecting the modulated interference light reflected from the film and producing an output signal in response; an extracting element for extracting a film interference component having a waveform from the output signal; and an element for calculating the thickness of the film from the waveform of the output signal component. The light detecting element includes a plurality of photodetectors having respective photometric wavenumber ranges that overlap. Thereby, a wavenumber range that is the sum of the respective wavenumber ranges of the respective components is obtained and an optical measurement can be realized over a wide wavenumber range that could not be measured with a single photodetector.

REFERENCES:
patent: 5002394 (1991-03-01), Auta
patent: 5159408 (1992-10-01), Waldenmaier et al.
patent: 5202939 (1993-04-01), Belleville et al.
patent: 5210590 (1993-05-01), Landa et al.
Abe et al. "Non-Destructive Measurement Of Surface Concentrations And Junction Depths of Diffused Semiconductor Layers", Japanese Journal of Applied Physics, vol. 7, No. 4, Apr. 1968, pp. 397-403.
Schumann, Jr., et al., "Phase Shift Corrections For Infrared Interference Measurement of Epitaxial Layer Thickness", Journal of the Electrochemical Society, vol. 113, No. 4, Apr. 1966, pp. 368-371.
Albert et al., "Thickness Measurement Of Epitaxial Films By the Infrared Interference Method", Journal of the Electrochemical Society, vol. 109, No. 8, Aug. 1962, pp. 709-713.
Schumann, Jr., "The Infrared Interference Method of Measuring Epitaxial Layer Thickness" Journal of the Electrochemical Society, vol. 116, No. 3, Mar. 1969, pp. 409-413.

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