Method of growing a ribbon crystal particularly suited for facil

Details Method of growing a ribbon crystal particularly suited for facil Method of growing a ribbon crystal particularly suited for facil

1978-04-28

1980-08-12

Garris, Bradley R.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156617SP, 156DIG64, 156DIG88, B01D 900, B01J 1718

Patent

active

042171652

ABSTRACT:
A method of growing a ribbon crystal wherein a meniscus of molten semiconductor material attached to vertical movable seed is lifted at a rate substantially equal to the rate at which the meniscus freezes, characterized by the steps of continuously sensing the brightness of the growth region of the ribbon in selected areas across the width thereof for detecting changes in the intensity of the brightness of said selected areas, and modifying the temperature of the meniscus and pulling speed in response to changes detected in the intensity for controlling the geometry of the ribbon.

REFERENCES:
patent: B584997 (1976-03-01), Ciszek
patent: 3265469 (1966-08-01), Hall
patent: 3291650 (1966-12-01), Dohmen et al.
patent: 3692499 (1972-09-01), Andrychuk
patent: 3870477 (1975-03-01), Labelle
patent: 3882319 (1975-05-01), Clement et al.
patent: 3892490 (1975-07-01), Uetsuki et al.
patent: 3954551 (1976-05-01), Cecil et al.
patent: 3977934 (1976-08-01), Lesk
patent: 4000030 (1976-12-01), Ciszek
patent: 4075055 (1978-02-01), Ciszek et al.
"An Electronic Device . . . ", J. of Crystal Growth, 13/14, pp. 619-623, 1972.

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