Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-07-16
1994-04-19
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257316, 257637, 257640, 257760, 437 42, 437 43, 437195, 437913, 437920, 437978, H01L 2968, H01L 21265
Patent
active
053048296
ABSTRACT:
In a nonvolatile semiconductor memory device with a two-layer gate structure, an interlayer insulating film is formed on a floating gate electrode of, e.g., polycrystalline silicon. The interlayer insulating film has a four-layer structure in which a first silicon nitride film, a first silicon oxide film, a second silicon nitride film and a second silicon oxide film are laminated in this order on the floating gate electrode, or a two-layer structure in which a first silicon nitride film and a first silicon oxide film are laminated in this order on the floating gate electrode. With the above structure, the threshold voltage of the semiconductor device is stabilized even after data-erase operation. Since, moreover, the first silicon oxide film can be formed by oxidizing the first silicon nitride film, then the quality of the first silicon oxide film can be enhanced, and accordingly the charge retaining properties of the device can be increased.
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patent: 5053840 (1991-10-01), Yoshikawa
1984 Symposium on VLSI Technology, Digest of Technical Papers, Sep. 10-12, 1984.
Extended Abstracts (The 38th Spring Meeting 1991); The Japan Society of Applied Physics and Related Societies.
29th Annual Proceedings, "Threshold Voltage Instability and Charge Retention in Nonvolatile Memory Cell with Nitride/Oxide Double-Layered Inter-poly Dielectric". Apr. 9, 10, 11, 1991.
Mori Seiichi
Yoshikawa Kuniyoshi
Kabushiki Kaisha Toshiba
Wojciechowicz Edward
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