Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-07-17
1994-08-09
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257622, 257627, 365185, H01L 2968, H01L 2934, G11C 1134
Patent
active
053369130
ABSTRACT:
A long-life, electrically writable and erasable non-volatile semiconductor memory device is disclosed. The memory device is fabricated in the following steps. After forming a first gate insulating film on a semiconductor substrate, a window is opened in the first gate insulating film to expose a portion of the surface of the semiconductor substrate, using a two-step etching technique in which dry etching and wet etching are performed successively. The exposed portion of the semiconductor substrate not over-etched is selectively oxidized to form a tunnel insulating film (second gate insulating film) having edge portions resistant to dielectric breakdown. Thereafter, a floating gate, a third gate insulating film, and a control gate are formed sequentially. The floating gate is patterned in such a way as to cover the entire tunnel insulating film or cross only a portion of an edge of the tunnel insulating film. The stress caused to the tunnel insulating film as a result of the oxidation process for forming the third gate insulating film is relieved, providing the tunnel insulating film with resistance to dielectric strength.
REFERENCES:
patent: 5210597 (1993-05-01), Kakiuchi et al.
G. Yaran et al 1982 Digest of Technical Papers Issue 82, pp. 108-109 "Nonvolatile Memories".
Kakiuchi Takao
Sato Kazuo
Matsushita Electronics Corporation
Prenty Mark V.
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