Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1977-12-08
1981-11-24
Smith, John D.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
73 23, 324 71SN, 357 25, 427 58, 427 82, 427 96, 430319, G01N 2700, G01N 3106
Patent
active
043025307
ABSTRACT:
Disclosed is a substance-sensitive semiconductor and a method for making the same, wherein a substance-sensitive material is combined with photoresist material and applied to an electronic device structure. The substance-sensitive material may be applied before or after the photoresist material, or even may be combined with the photoresist material to form a substance-sensitive layer of photoresist material on the semiconductor. The photoresist material is then processed, such that unwanted, or undesirable areas are free from the photoresist material and the areas of desired substance sensitivity have a fully processed photoresist layer. A further embodiment of the present disclosure provides multiple layers sensitive to different ions on a single sheet of semiconductor or electromagnetically active material.
REFERENCES:
patent: 3373323 (1968-03-01), Wolfrum et al.
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patent: 3966580 (1976-06-01), Janata et al.
patent: 4020830 (1977-05-01), Johnson
patent: 4103227 (1978-07-01), Zemel
patent: 4158807 (1979-06-01), Senturia
patent: 4180771 (1979-12-01), Guckel
Janata et al., "Chemically Sensitive Field Effect Transistors", Biomedical Engineering, Jul. 1976, pp. 241-245.
Moss et al., "Potassium Ion Sensitive Field Effect Transistor", Analytical Chemistry, 47, No. 13, Nov. 1975.
Smith John D.
University of Pennsylvania
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