Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1983-05-09
1985-12-17
Bernstein, Hiram H.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156617R, 148 15, 427 431, C30B 1306
Patent
active
045591024
ABSTRACT:
For recrystallizing a layer of polysilicon extending over a layer of silicon dioxide on a substrate of silicon single crystal, the silicon dioxide layer is interrupted at seeding locations which are spaced apart in at least one direction and at which the polysilicon layer comes into contact with the substrate, a beam of charged particles is impacted and focused on the polysilicon layer, the substrate and beam are relatively displaced so that the beam of charged particles scans at least a portion of the polysilicon layer in the direction in which the seeding locations are spaced apart, the speed with which the beam relatively scans the polysilicon layer is determined so that the polysilicon layer is subjected to zone melting at the area of impact thereon for growing silicon single crystals by lateral epitaxial recrystallization of the polysilicon from the seeding locations, and charge buildup on the layer of silicon dioxide is avoided to prevent interference with focusing of the beam.
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Shibata et al, Appl. Phys. Lett. 39(8) 10/81, pp. 645-647.
Bernstein Hiram H.
Eslinger Lewis H.
Sinderbrand Alvin
Sony Corporation
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