Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1994-01-31
1994-12-06
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 53, 257 55, 257 56, 257 57, 257 65, 257 62, 257 63, 257 66, 136258, H01L 4500
Patent
active
053713800
ABSTRACT:
A non-single crystalline semiconductor containing at least one kind of atoms selected from the group consisting of silicon atoms (Si) and germanium atoms (Ge) as a matrix, and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and halogen atoms (X), wherein said non-single crystalline semiconductor has an average radius of 3.5 .ANG. or less and a density of 1.times.10.sup.19 (cm.sup.-3) or less as for microvoids contained therein. The non-single crystalline semiconductor excels in semiconductor characteristics and adhesion with other materials and are effectively usable as a constituent element of various semiconductor devices.
REFERENCES:
patent: 4615298 (1986-10-01), Yamazaui
patent: 4698494 (1987-10-01), Kato et al.
Mahan et al., "Small Angle X-Ray Scattering from Microvoids in the A-SiCiH Alloy," IEEE Transactions on Electron Devices, vol. 36, No. 12, Dec. 1989, pp. 2859-2862.
Mahan et al., "Characterization of Microvoids in Device-Quality Hydrogenated Amorphous Silicon by Small-Angle X-Ray Scattering and Infrared Measurements,"Physical Review B, vol. 40, No. 17, 15 Dec. 1989, pp. 12024-12027.
Pankove, Ed., Semiconductors and Semimetals, vol. 21, Part C, Chapter 6, 1984, Academic Press, New York, pp. 207-237.
Aoike Tatsuyuki
Kariya Toshimitsu
Koda Yuzo
Niwa Mitsuyuki
Saito Keishi
Canon Kabushiki Kaisha
Mintel William
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