Si- and/or Ge-containing non-single crystalline semiconductor fi

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

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257 53, 257 55, 257 56, 257 57, 257 65, 257 62, 257 63, 257 66, 136258, H01L 4500

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053713800

ABSTRACT:
A non-single crystalline semiconductor containing at least one kind of atoms selected from the group consisting of silicon atoms (Si) and germanium atoms (Ge) as a matrix, and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and halogen atoms (X), wherein said non-single crystalline semiconductor has an average radius of 3.5 .ANG. or less and a density of 1.times.10.sup.19 (cm.sup.-3) or less as for microvoids contained therein. The non-single crystalline semiconductor excels in semiconductor characteristics and adhesion with other materials and are effectively usable as a constituent element of various semiconductor devices.

REFERENCES:
patent: 4615298 (1986-10-01), Yamazaui
patent: 4698494 (1987-10-01), Kato et al.
Mahan et al., "Small Angle X-Ray Scattering from Microvoids in the A-SiCiH Alloy," IEEE Transactions on Electron Devices, vol. 36, No. 12, Dec. 1989, pp. 2859-2862.
Mahan et al., "Characterization of Microvoids in Device-Quality Hydrogenated Amorphous Silicon by Small-Angle X-Ray Scattering and Infrared Measurements,"Physical Review B, vol. 40, No. 17, 15 Dec. 1989, pp. 12024-12027.
Pankove, Ed., Semiconductors and Semimetals, vol. 21, Part C, Chapter 6, 1984, Academic Press, New York, pp. 207-237.

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