Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-08-04
2000-12-12
Smith, Matthew
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438653, 438800, H01L 21463
Patent
active
061598534
ABSTRACT:
The present invention provides three embodiments to deposit layers over a substrate using ultrasound energy to vibrate the substrate during (1) PVD or CVD deposition, (2) anneal or (3) plating deposition. The first embodiment deposits a first layer over a substrate using ultrasonic energy to vibrate the substrate. The ultrasound allows the layer to deposit more conformal over opening sidewalls and decreases overhangs and voids. The second embodiment involves using ultrasonic vibrations during annealing or RTA. The ultrasound smooches out barrier/seed/conductive layers in contact holes. The third embodiment is a method of plating a metal layer such as Cu over a substrate while vibrating the substrate with ultrasonic waves. The substrate is vibrated with ultrasound waves in vertical or horizontal direction. The ultrasonic vibration allow the metal to plate in small contact holes with improved step coverage.
REFERENCES:
patent: 4985750 (1991-01-01), Hoshino
patent: 5219790 (1993-06-01), Miyatake
patent: 5270252 (1993-12-01), Papanicolaou
patent: 5275714 (1994-01-01), Bonnet et al.
patent: 5290733 (1994-03-01), Hayasaka et al.
patent: 5425965 (1995-06-01), Tamor et al.
patent: 5520784 (1996-05-01), Ward
patent: 5610103 (1997-03-01), Xu et al.
patent: 5648128 (1997-07-01), Yeh et al.
patent: 5705230 (1998-01-01), Matanabe et al.
patent: 5763018 (1998-06-01), Sato
patent: 5969422 (1999-10-01), Ting et al.
patent: 5985747 (1999-11-01), Taguchi
Ackerman Stephen B.
Anya Igwe W.
Industrial Technology Research Institute
Saile George O.
Smith Matthew
LandOfFree
Method for using ultrasound for assisting forming conductive lay does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for using ultrasound for assisting forming conductive lay, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for using ultrasound for assisting forming conductive lay will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-216448