Method of forming a contact hole in a semiconductor wafer

Details Method of forming a contact hole in a semiconductor wafer Method of forming a contact hole in a semiconductor wafer

1999-09-08

2000-12-12

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438666, 438701, 438723, 438906, 438725, H01L 213205, H01L 214763

Patent

active

06159833&

ABSTRACT:
The present invention provides a method of forming a contact hole in a semiconductor wafer. The semiconductor wafer comprises a silicon substrate, a silicon--oxygen layer positioned on the silicon substrate, and a photoresist layer positioned on the silicon--oxygen layer. An anisotropic dry-etching process is performed to vertically remove the silicon--oxygen layer below the opening to a predetermined depth to form the contact hole which contains a polymer layer on its surface. A soft-etching process is performed to remove the polymer layer in the contact hole. The dry-etching process and soft-etching process are performed alternatively to vertically remove the silicon--oxygen layer under the contact hole until the surface of the silicon substrate can be reached through the contact hole.

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