Dry etching with less particles

Details Dry etching with less particles Dry etching with less particles

1996-01-30

1997-06-17

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 1566461, 216 69, 20429837, 20429838, 118723MW, 118723MA, 134 11, H01L 2100, C23C 1400, C23F 400

Patent

active

056393415

ABSTRACT:
Sticking layer forming material is provided so as to be exposed to plasma, partially on an anti-deposition plate mounted on the inner wall of a process chamber of an ECR (or microwave) plasma etching system. The sticking layer forming material is refractory metal such as W or refractory metal silicide. After a wafer with a photoresist layer is set on a susceptor, a plasma process (aging process) is performed to form a sticking layer of low hardness on the inner wall of the process chamber, the sticking layer containing WCl.sub.5, WCl.sub.6, etc. and resist components. This sticking layer prevents Si oxyhalide from being scaled off the inner wall of the process chamber during the etching process of Si-containing material after the aging process. The sticking layer forming material may be provided on a wafer and the resist components may be supplied from gas. In this manner, particles are reduced which are otherwise generated more while Si-containing material such as silicide is etched.

REFERENCES:
patent: 5143866 (1992-09-01), Matsutani
patent: 5211825 (1993-05-01), Saito et al.
patent: 5482612 (1996-01-01), Armstrong et al.
patent: 5514246 (1996-05-01), Blalock

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