Vertical type vapor-phase growth apparatus

Details Vertical type vapor-phase growth apparatus Vertical type vapor-phase growth apparatus

1981-01-26

1982-09-14

Lawrence, Evan K.

Coating apparatus

Gas or vapor deposition

Work support

118900, C23C 1100

Patent

active

043489818

ABSTRACT:
A vertical type vapor-phase growth apparatus comprises a vapor-phase growth reactor constituted of an upper section defining an upper chamber having a lateral cross-section of about 200 cm.sup.2 and a lower section defining a lower chamber having a lateral cross-sectional area greater than, but smaller than four times the cross-sectional area of, the upper chamber, and a support for a semiconductor substrate disposed within the lower chamber. The support is in the form of a silicon plate on which a sample is directly placed.

REFERENCES:
patent: 3231337 (1966-01-01), Barkemeyer et al.
patent: 3297501 (1967-01-01), Reisman
patent: 3338761 (1967-08-01), Cheney et al.
patent: 3406048 (1968-10-01), Immendorfer et al.
patent: 3675619 (1972-07-01), Burd
patent: 3745969 (1973-07-01), Huffman et al.
patent: 4290385 (1981-09-01), Nakanisi et al.
IBM Technical Disclosure Bulletin, "Producing Epitaxial Germanium Deposits," Hornberger, Oct. 1966, vol. 9, No. 5, pp. 538, 539.
J. of the Electrochemical Soc., "The Use of Metal Organics in the Preparation of Semiconductor Materials," Manasevit et al; vol. 116, No. 12, pp. 1725-1732, Dec. 1969.
J. of the Electrochemical Soc., "Properties of Epitaxial Gallium Arsenide from Trimethylgallium and Arsine," Ito et al., pp. 419-423, Oct. 1973.

Affiliated with

Also associated with

Rating

Vertical type vapor-phase growth apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vertical type vapor-phase growth apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical type vapor-phase growth apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2150981