Ion implantation device

Details Ion implantation device Ion implantation device

1995-06-02

1997-03-04

Anderson, Bruce C.

Radiant energy

Inspection of solids or liquids by charged particles

Analyte supports

25049221, G21K 510, H01J 37317

Patent

active

056082231

ABSTRACT:
An ion implantation device is equipped with a high-speed driving device which causes rotation of a disk that supports semiconductor wafers around its outer periphery. A center position of the disk is the axis of the high-speed rotation. A low-speed driving device causes relative movement of the disk in a radial direction. The ion implantation device calculates the movement speed of the low-speed driving device with reference to different spacings between wafers about the outer periphery and the distance from the center of the disk to the ion implantation position and controls the low speed scan speed so that ions are uniformly implanted into the wafers.

REFERENCES:
patent: 3778626 (1973-11-01), Robertson
patent: 4234797 (1980-11-01), Ryding
patent: 4517465 (1985-05-01), Gault et al.
patent: 4628209 (1986-09-01), Wittkower
patent: 4672210 (1987-06-01), Armstrong et al.
patent: 4733091 (1988-03-01), Robinson et al.
patent: 4775796 (1988-10-01), Purser et al.
patent: 5046148 (1991-09-01), Nogami et al.
patent: 5432352 (1995-07-01), Van Bavel
patent: 5525807 (1996-06-01), Hirokawa et al.
Patent Abstracts of Japan, vol. 7 No. 182 (E-192)[1327], 11 Aug. 1983 JP-A-58 087746 (Nippon Denki) 25 May 1983.
Family Search Results for Japanese published application.

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