Method for forming a contact/VIA

Details Method for forming a contact/VIA Method for forming a contact/VIA

1992-02-07

1994-12-06

Thomas, Tom

Fishing, trapping, and vermin destroying

437190, 437194, 148DIG147, H01L 2144

Patent

active

053710410

ABSTRACT:
A method for forming a connection between two levels in a semiconductor structure includes first forming a VIA (14) through an insulating layer (12) to an underlying structure (10). Sidewall spacers (22) and (24) are formed on the vertical walls of the VIA (14). The spacers (22) and (24) have tapered surfaces. A barrier layer (30) is then formed over the bottom surface of the VIA followed by CVD deposition of a conductive layer (32) of WSi.sub.2 to provide a conformal conductive layer. An aluminum layer (38) is then deposited by physical vapor deposition techniques with the descending portions of layer (32) providing a conductive connection between the aluminum layer (38) and the lower structure (10) in the VIA (14).

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