Low-temperature oxidation at surfaces using ozone decomposition

Details Low-temperature oxidation at surfaces using ozone decomposition Low-temperature oxidation at surfaces using ozone decomposition

1994-03-16

1995-08-22

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427578, 427575, 4272554, 437239, B05D 306

Patent

active

054438632

ABSTRACT:
Decomposition of ozone in a microwave discharge cavity leads to formation of highly energetic excited states of atomic oxygen which can efficiently oxidize materials at a temperature far less than that needed for purely thermal oxidation. This technique can be applied to formation of films of silica at the surface of silicon and silicon carbide while maintaining quite moderate surface temperatures, often under 100.degree. C. The technique can be used generally in a process to oxidize materials whose oxidation requires a standard free energy change of less than about +636 kJ/mol.

REFERENCES:
patent: 4409260 (1983-10-01), Pastor et al.
patent: 5284824 (1994-02-01), Noda et al.
Tsukamoto et al, "Role of microwave oxygen plasma in the low-temperature growth of HoBa.sub.2 Cu.sub.3 O.sub.x thin films", Physica C 181(1991) pp. 369-373.
Yamamoto et al, "Role of atomic oxygen produced by an electron cyclotron resonance plasma in the oxidation of YBa.sub.2 Cu.sub.3 O.sub.7-x thin films studied by in situ resistivity measurement", Appl. Phys. lett. 57(18) Oct. 1990, pp. 1936-1938.
L. Meuhlhoff et al, J. Appl. Phys., 60, pp. 2558-2563. (1986).
E. Fitzer and R. Ebi "Silicon Carbide 1973", J. W. Faust, Jr., and C. E. Ryan, eds., University of South Carolina Press, Columbia, 1974, pp. 320-328.
C. H. Chou and J. Phillips, J. Appl. Phys., 68, pp. 2415-2423 (1990).

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