Lead on chip type semiconductor integrated circuit device to avo

Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame

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Details

257690, 257691, 257692, H01L 23495

Patent

active

059776145

ABSTRACT:
The lead structure for a first power supply potential is formed by first and second power supply leads 35a and 35b and a first connecting conductor part 36a connected there, and the lead structure for a second power supply potential is formed by third and fourth power supply leads 35c and 35d and a second connecting conductor part 36b connected there. The first connecting conductor part 36a and the second connecting conductor part 36b are placed at the central part of a semiconductor chip with a predetermined spacing between them, a plurality of first signal leads 34a and first signal pads 32a which are respectively connected there are disposed in the area between the first connecting conductor part 36a and a first edge 41, and a plurality of second signal leads 34b and second signal pads which are respectively connected there are disposed in the area between the second connecting conductor part 36b and a second edge 42.

REFERENCES:
patent: 5068712 (1991-11-01), Murakami et al.
patent: 5229639 (1993-07-01), Hansen et al.
patent: 5250840 (1993-10-01), Oh et al.

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