Semiconductor device having insulation gate type field effect tr

Details Semiconductor device having insulation gate type field effect tr Semiconductor device having insulation gate type field effect tr

1998-07-10

1999-11-02

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257345, 257375, 257397, 257398, 257404, H01L 2976

Patent

active

059775904

ABSTRACT:
An n.sup.- well region is formed at a surface of a semiconductor substrate. A MOS transistor of high breakdown voltage having a drain region and a source region is formed at the surface of the n.sup.- well region. The n.sup.- well region has an impurity concentration peak right below the drain region. Accordingly, a semiconductor device having a high breakdown voltage insulation gate type field effect transistor that can suppress increase of a depletion layer when high voltage is applied across the drain, that can reduce the electric field intensity across the drain, and that has superior breakdown voltage, and a fabrication method thereof, are obtained.

REFERENCES:
patent: 4700212 (1987-10-01), Okazawa
patent: 4890146 (1989-12-01), Williams et al.
patent: 5355011 (1994-10-01), Takata
patent: 5495124 (1996-02-01), Terashima
patent: 5623154 (1997-04-01), Murakami et al.

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