Thin-film transistor having a catalyst element in its active reg

Details Thin-film transistor having a catalyst element in its active reg Thin-film transistor having a catalyst element in its active reg

1998-03-26

1999-11-02

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 66, 257 59, 257 72, 257347, 257348, 257349, 257350, 257351, 257352, 257353, H01C 31036

Patent

active

059775599

ABSTRACT:
A thin-film transistor (TFT) which has a crystalline silicon active layer of excellent reliability and characteristics, and a method of fabricating such a TFT inexpensively are provided. In a TFT which has at least two low density impurity regions and a source/drain adjacent to a channel-forming region, catalyst elements which cause amorphous silicon to crystallize are included in the source/drain, and the density of said catalyst elements in the interface between the channel-forming region and the low-density impurity regions is less than that in the source/drain.

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