Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-09-13
1993-03-09
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257316, 257401, H01L 2968
Patent
active
051928728
ABSTRACT:
A design for EPROMs, EEPROMs, and Flash EEPROMs is described which greatly increases the coupling coefficient of the cell and enhances cell access speed. The increase in control gate to floating gate coupling is due to a decrease in the capacitance between the floating gate and the substrate, which includes the drain, source, and channel. This increase in the coupling coefficient will allow for a smaller cell size and better program and erase characteristics. A reduction in the capacitance between the floating gate and the transistor drain will reduce the so-called drain coupling effect. Severe drain coupling could increase undesirable drain-to-source leakage. Finally, a structure comprising the invention has a faster cell access time resulting from the fact that half the cell channel region is directly controlled by the control gate. This half of the channel region will see higher effective vertical electric field from the control gate than the channel region covered by the floating gate. A high transistor current will be generated, thereby increasing the speed of the cell.
REFERENCES:
patent: 4853895 (1989-08-01), Mitchell et al.
patent: 5034798 (1991-07-01), Ohsima
Bowers Courtney A.
James Andrew J.
Micro)n Technology, Inc.
Protigal Stanley N.
LandOfFree
Cell structure for erasable programmable read-only memories does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Cell structure for erasable programmable read-only memories, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cell structure for erasable programmable read-only memories will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-212544