Method to incorporate, and a device having, oxide enhancement do

Details Method to incorporate, and a device having, oxide enhancement do Method to incorporate, and a device having, oxide enhancement do

1997-02-14

1999-03-23

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

438770, 438771, 438776, 438787, H01L 21461, H01L 2131

Patent

active

058859047

ABSTRACT:
A method for forming a uniform and reliable oxide layer on the surface of a semiconductor substrate using projection gas immersion laser doping (P-GILD) is provided. A semiconductor substrate is immersed in an oxide enhancing compound containing atmosphere. The oxide enhancing compound containing atmosphere may include phosphorus, arsenic, boron or an equivalent. A 308 nm excimer laser is then applied to a portion of the substrate to induce incorporation of the oxide enhancing compound into a portion of the substrate. The deposition depth is dependent upon the strength of the laser energy directed at the surface of the substrate. A uniform and reliable oxide layer is then formed on the surface of the substrate by heating the substrate. The laser may be applied with a reflective reticle or mask formed on the substrate. An E.sup.2 PROM memory cell having a program junction region in a silicon substrate is also provided. An oxide layer is positioned between a program junction and a floating gate. The oxide layer is formed by a single or multiple thermal oxidation step(s) to have at least a first oxide thickness due to a GILD oxide enhancing compound underlying a region of the oxide having at least the first oxide thickness.

REFERENCES:
patent: 4924278 (1990-05-01), Logie
patent: 5316969 (1994-05-01), Ishida et al.
patent: 5620910 (1997-04-01), Teramoto

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