Method of forming contact openings and an electric component for

Details Method of forming contact openings and an electric component for Method of forming contact openings and an electric component for

1998-04-27

1999-03-23

Booth, Richard A.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438618, 438 98, 438233, 438523, 438533, 438571, 438586, 438696, H01V 2144

Patent

active

058858903

ABSTRACT:
A method for forming a contact opening is described and which includes providing a node location to which electrical connection is to be made; forming a conductive line adjacent the node location, the conductive line having a conductive top and sidewall surfaces; forming electrically insulative oxide in covering relation relative to the top surface of the conductive line; forming electrically insulative nitride sidewall spacers over the conductive sidewall surfaces, the nitride sidewall spacers projecting outwardly of the conductive line top conductive surface, the electrically insulative oxide positioned between the nitride sidewall spacers; forming an electrically insulative layer outwardly of the conductive line, and the node location; and etching a contact opening to the node location or the top surface through the electrically insulative layer substantially selective relative to the nitride sidewall spacers.

REFERENCES:
patent: 5162890 (1992-11-01), Butler
patent: 5166096 (1992-11-01), Cote et al.
patent: 5173752 (1992-12-01), Motonami et al.
patent: 5272367 (1993-12-01), Dennison et al.
patent: 5317193 (1994-05-01), Watanabe
patent: 5444003 (1995-08-01), Wang et al.
patent: 5510648 (1996-04-01), Davies et al.
patent: 5547892 (1996-08-01), Wuu et al.
patent: 5552620 (1996-09-01), Lu et al.
patent: 5576243 (1996-11-01), Wuu et al.
patent: 5612240 (1997-03-01), Chang
patent: 5652174 (1997-07-01), Wuu et al.
patent: 5710450 (1998-01-01), Chau et al.

Affiliated with

Also associated with

Rating

Method of forming contact openings and an electric component for does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming contact openings and an electric component for, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming contact openings and an electric component for will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2124878