Process for making refractory metal silicide cap for protecting

Details Process for making refractory metal silicide cap for protecting Process for making refractory metal silicide cap for protecting

1989-05-25

1989-12-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437192, 437246, 437 41, 437983, 148DIG15, 148DIG19, 148DIG147, 357 71, H01L 21283

Patent

active

048867640

ABSTRACT:
A process for forming a capping layer over a titanium silicide layer includes forming a layer of polysilicon (16) over a gate-oxide layer (14). A layer of titanium (18) is then formed over the poly layer (16) followed by deposition of a composite layer of tantalum silicide (20). The structure is then patterned and subjected to an annealing process to form a titanium silicide layer (22) covered by the capping layer (20) of tantalum silicide. The tantalum silicide provides a much higher oxidation resistant layer with the underlying titanium silicide providing the desirable conductive properties needed for long runs of interconnects on a semiconductor structure.

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