Semiconductor memory

Details Semiconductor memory Semiconductor memory

1992-10-14

1994-05-03

LaRoche, Eugene R.

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

365226, 3072961, 3072968, G11C 1134

Patent

active

053093992

ABSTRACT:
A semiconductor memory has a first internal circuit operated by an external source, a second internal circuit operated by an internal source which outputs an internal voltage lower than that of the external source and a voltage-down-converter supplying the internal source to the second internal circuit. The voltage-down-convertor includes a reference-voltage-source circuit and voltage-down-circuit. The reference-voltage-source circuit is made up of a standard-voltage-generation-circuit generating a standard voltage equal to a standard internal source voltage, a gate circuit outputting the standard voltage as the reference voltage when a control signal from outside is of a first logic level, a dividing circuit outputting voltages which are lower or higher than the standard internal source voltage and a selection circuit which selects one of the output voltages of the dividing circuit when the control signal is of a second logic level.

REFERENCES:
patent: 4964084 (1990-10-01), Jung et al.
patent: 5077518 (1991-12-01), Han
patent: 5121007 (1992-06-01), Aizaki

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