Semiconductor device having improved thin film transistors

Details Semiconductor device having improved thin film transistors Semiconductor device having improved thin film transistors

1992-05-27

1994-05-03

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257350, 257351, 257369, 257904, H01L 2701, H01L 2712, H01L 310392, H01L 2711

Patent

active

053090101

ABSTRACT:
A semiconductor device comprising a MOS transistor made at the surface of a p-type silicon substrate with a ridge on the surface of it and covered with an insulating film. The gate electrode of the MOS transistor has a configuration of the ridge covered with the insulating film. The semiconductor further comprises a TFT build under the utilization of the ridge. The channel region of the TFT is formed only on the side face(s) of the gate electrode. The source and drain regions extending across the ridge are disposed on the opposite sides of, and connect to, the channel region. Thus the channel region of the TFT is perpendicular to the surface of the silicon substrate, and the channel current flows parallel to the surface of the silicon substrate. The channel width of the TFT is determined substantially by the height of the gate electrode of MOS transistor, and hence becomes narrower than the minimum processible size. This TFT therefore is capable of size reduction. It has further advantages of reduced short channel effect and less leak current particularly when turned off.

REFERENCES:
patent: 4484209 (1984-11-01), Uchida
patent: 4533934 (1985-08-01), Smith
patent: 4996574 (1991-02-01), Shirasaki
patent: 5072286 (1991-12-01), Minami et al.
patent: 5115289 (1992-05-01), Hisamoto et al.

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