Sloped contact etch process

Details Sloped contact etch process Sloped contact etch process

1986-11-17

1987-10-06

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156651, 156655, 1566591, 156657, 20419232, B44C 122, C03C 1500, C03C 2506

Patent

active

046981284

ABSTRACT:
A process described provides a sloped contact etch. The process has the steps of: etching a substrate then removing the polymer that is produced during the substrate etch. These two steps are alternated until a desired depth is reached. Next, the resist is etched followed by an etch of the substrate. This is then repeated until the required depth is reached. By varying the duration and repetition of the etches, the slope of the etch can be regulated.

REFERENCES:
patent: 4361599 (1982-11-01), Gorowitz et al.
patent: 4522681 (1985-06-01), Gorowitz et al.
Weiss, "Plasma Etching of Oxides and Nitrides", Semiconductor International, Feb. 1983, pp. 56-62.
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Cobum, "Pattern Transfer" Solid State Technology, Apr. 1986, pp. 117-122.

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