Static information storage and retrieval – Read/write circuit – Data refresh
Patent
1994-06-10
1996-03-12
Nelms, David C.
Static information storage and retrieval
Read/write circuit
Data refresh
365211, 3652257, G11C 700
Patent
active
054992141
ABSTRACT:
In a semiconductor memory device, a constant voltage is applied to a resistor having a positive temperature coefficient, whereby a first reference current flowing through that resistor is converted into a voltage by a resistor. That voltage is converted into a second reference current by a P channel MOS transistor, whereby a second current of a value equal to the value of the second reference current flows through each of a plurality of inverters by a current mirror circuit. These inverters are connected in a ring manner to form a ring oscillator. The first reference current becomes lower as the operating temperature rises, whereby the second reference current increases. As a result, the oscillator cycle of the ring oscillator becomes shorter as the operating temperature rises.
REFERENCES:
patent: 5311476 (1994-05-01), Kajimoto et al.
patent: 5375093 (1994-12-01), Hirano
1993 Symposium on VLSI Circuits Digest of Technical Papers, May 19-21, 1993/Kyoto, Sponsored by The Japan Society of Applied Physics and The IEEE Solid-State Circuits Council, pp. viii, 43-44.
Hayashikoshi Masanori
Kajimoto Takeshi
Mori Shigeru
Le Vu A.
Mitsubishi Denki & Kabushiki Kaisha
Nelms David C.
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