Semiconductor device having increased capacitance and method for

Details Semiconductor device having increased capacitance and method for Semiconductor device having increased capacitance and method for

1994-12-12

1996-03-12

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257300, 257306, 257379, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

054988896

ABSTRACT:
A semiconductor device (10) has a capacitor structure formed within an opening (30) of a stack of a dielectric layer (24), a conductive layer (26), and a dielectric layer (28). A first capacitor electrode is formed by conductive sidewall spacers (32) which are in electrical contact with conductive layer (26) along sidewalls of the opening. A capacitor dielectric (34) is formed on the sidewall spacers. A second capacitor electrode is formed by a conductive layer (38), either alone or in conjunction with a second set of conductive sidewall spacers (36). In one embodiment, the capacitor is formed over a gate electrode (15) of a bulk transistor and makes contact thereto. The capacitor structure is particularly suited for use in an SRAM cell.

REFERENCES:
patent: 4845539 (1989-07-01), Inoue
patent: 5158898 (1992-10-01), Hayden et al.
patent: 5229310 (1993-07-01), Sivan
patent: 5235189 (1993-08-01), Hayden et al.

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