Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-03-14
1996-03-12
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257324, 365145, H01L 2976
Patent
active
054988888
ABSTRACT:
A semiconductor device having a source region, a drain region, a channel region between the source region and the drain region, a gate consisting of at least three input electrodes provided above the channel region, and a potential modulating film provided between the channel region and the gate. The potential modulating film can assume at least two potential modulating states, so that the potential of the channel region is modulated between and held at different values. The potential of the channel region is modulated by changing the state of the potential modulating film. Specifically, the potential of the channel region is modulated by not only applying voltages to the input electrodes but also controlling the state of the potential modulating film. If in processing at least three input signals, a predetermined one of them corresponds to control of the state of the potential modulating film and the remaining input signals correspond to the input voltages to the input electrodes, the number of wires can be decreased.
REFERENCES:
patent: 3832700 (1974-08-01), Wu et al.
patent: 5079603 (1992-01-01), Komori et al.
patent: 5309392 (1994-05-01), Ootsuka et al.
Yamauchi, "A Metal-Insulator-Semiconductor (MIS) Device Using a Ferroelectric Polymer Thin Film in the Gate Insulator," Japanese Journal of Applied Physics, vol. 25 No. 4, Apr. 1986, pp. 590-594.
Bowers Courtney A.
Crane Sara W.
Rabin Steven M.
Rohm & Co., Ltd.
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